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{"_buckets": {"deposit": "8bd01987-3300-433d-8f47-e876057e5b29"}, "_deposit": {"created_by": 1, "id": "49043", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "49043"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00049043", "sets": ["1"]}, "author_link": ["494633", "494631", "494636", "494637", "494630", "494629", "494632", "494634", "494641", "494635", "494638", "494639", "494640"], "item_8_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2018-03", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "326", "bibliographicPageStart": "321", "bibliographicVolumeNumber": "202", "bibliographic_titles": [{"bibliographic_title": "Proceedings of the 15th International Conference on X-Ray Lasers"}]}]}, "item_8_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.", "subitem_description_type": "Abstract"}]}, "item_8_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1007/978-3-319-73025-7_48", "subitem_relation_type_select": "DOI"}}]}, "item_8_relation_17": {"attribute_name": "関連サイト", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "https://link.springer.com/chapter/10.1007/978-3-319-73025-7_48"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://link.springer.com/chapter/10.1007/978-3-319-73025-7_48", "subitem_relation_type_select": "URI"}}]}, "item_8_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0930-8989", "subitem_source_identifier_type": "ISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Matsunaga, K."}], "nameIdentifiers": [{"nameIdentifier": "494629", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hayashi, T."}], "nameIdentifiers": [{"nameIdentifier": "494630", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kurokawa, S."}], "nameIdentifiers": [{"nameIdentifier": "494631", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yokoo, H."}], "nameIdentifiers": [{"nameIdentifier": "494632", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hasegawa, Noboru"}], "nameIdentifiers": [{"nameIdentifier": "494633", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nishikino, Masaharu"}], "nameIdentifiers": [{"nameIdentifier": "494634", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kumada, T."}], "nameIdentifiers": [{"nameIdentifier": "494635", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Otobe, Tomohito"}], "nameIdentifiers": [{"nameIdentifier": "494636", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Matsukawa, Y."}], "nameIdentifiers": [{"nameIdentifier": "494637", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takaya, Y."}], "nameIdentifiers": [{"nameIdentifier": "494638", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "長谷川 登", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "494639", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "錦野 将元", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "494640", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "乙部 智仁", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "494641", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam ", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam "}]}, "item_type_id": "8", "owner": "1", "path": ["1"], "permalink_uri": "https://repo.qst.go.jp/records/49043", "pubdate": {"attribute_name": "公開日", "attribute_value": "2018-05-18"}, "publish_date": "2018-05-18", "publish_status": "0", "recid": "49043", "relation": {}, "relation_version_is_last": true, "title": ["Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam "], "weko_shared_id": -1}
Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam
https://repo.qst.go.jp/records/49043
https://repo.qst.go.jp/records/49043250deee3-9cee-4e35-8abc-93480e8b3600
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-05-18 | |||||
タイトル | ||||||
タイトル | Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Matsunaga, K.
× Matsunaga, K.× Hayashi, T.× Kurokawa, S.× Yokoo, H.× Hasegawa, Noboru× Nishikino, Masaharu× Kumada, T.× Otobe, Tomohito× Matsukawa, Y.× Takaya, Y.× 長谷川 登× 錦野 将元× 乙部 智仁 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process. | |||||
書誌情報 |
Proceedings of the 15th International Conference on X-Ray Lasers 巻 202, p. 321-326, 発行日 2018-03 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0930-8989 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1007/978-3-319-73025-7_48 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://link.springer.com/chapter/10.1007/978-3-319-73025-7_48 | |||||
関連名称 | https://link.springer.com/chapter/10.1007/978-3-319-73025-7_48 |