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Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction
https://repo.qst.go.jp/records/48519
https://repo.qst.go.jp/records/4851997906ace-8f9d-4753-86ad-d626f3981966
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-02-15 | |||||
タイトル | ||||||
タイトル | Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Suzuki, Hidetoshi
× Suzuki, Hidetoshi× 佐々木, 拓生× 高橋, 正光× Ohshita, Yoshio× Kojima, Nobuaki× Kamiya, Itaru× Fukuyama, Atsuhiko× Ikari, Tetsuo× Yamaguchi, Masafumi× 佐々木 拓生× 高橋 正光 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The effect of substrate orientation on strain relaxation mechanisms of an InGaAs layer grown on vicinal GaAs substrates was investigated by in situ X-ray diffraction (XRD). The crystallographic tilt and indium segregation in the InGaAs layer were altered depending on the miscut direction and angle. In the case of the substrate tilted 6° toward the [110] direction, one type of misfit dislocations was formed preferentially rather than other types, especially in the rapid relaxation phase. While in the case of the substrate tilted 6° toward the [1-10] direction, no anisotropies during relaxation were observed. The present finding indicates that the appropriate use of vicinal substrates may lead to a novel method of improving the crystal quality of heterolayers. |
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書誌情報 |
Japanese Journal of Applied Physics 巻 56, 号 8S2, p. 08MA06-1-08MA06-4, 発行日 2017-08 |
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出版者 | ||||||
出版者 | IOP science | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.7567/JJAP.56.08MA06 | |||||
関連サイト | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.7567/JJAP.56.08MA06 | |||||
関連名称 | https://doi.org/10.7567/JJAP.56.08MA06 |