量研学術機関リポジトリ「QST-Repository」は、国立研究開発法人 量子科学技術研究開発機構に所属する職員等が生み出した学術成果（学会誌発表論文、学会発表、研究開発報告書、特許等）を集積しインターネット上で広く公開するサービスです。 Welcome to QST-Repository where we accumulates and discloses the academic research results(Journal Publications, Conference presentation, Research and Development Report, Patent, etc.) of the members of National Institutes for Quantum Science and Technology.
Thank you very much for using our website. On the 11th of March 2019, this site was moved from our own network server to the JAIRO Cloud network server. If you previously bookmarked this site, that bookmark will no longer work. We would be grateful if you could bookmark the website again. Thank you very much for your understanding and cooperation.
Co2MnGa is known as a Weyl semimetal exhibiting giant anomalous Hall and Nernst effects. However, the performance of Co2MnGa thin films grown on MgO(001) by the magnetron sputtering method is somewhat lower than that of the bulk crystals. Here, we attempted to improve the electrical transport properties by post-growth annealing at temperatures from 573 to 773 K. X-ray diffraction analysis indicated that the degree of long-range order changed from A2 to B2 plus L21 upon annealing at 673 K or above. Positron annihilation spectroscopy revealed the presence of high-density (≿100 ppm) divacancies, which were absent in the bulk crystal, and their partial improvement near the Co2MnGa/MgO interface on annealing at 673 K or above. Accompanying these structural changes, the longitudinal and anomalous Hall conductivities increased considerably and the anomalous Hall angle reached a maximum value of 11.8%. These findings imply that the post-growth annealing improved the electrical transport properties of Co2MnGa films through the development of long-range crystal order and reduction of divacancies. However, the electrical performance achieved by thermal annealing was still insufficient in comparison with the bulk crystals, and hence for further improvement, alternative approaches may need to be considered.
Effect of disorder and vacancy defects on electrical transport properties of Co2MnGa thin films grown by magnetron sputtering
