WEKO3
アイテム
{"_buckets": {"deposit": "92f9a23a-e378-4349-990c-433f07da8462"}, "_deposit": {"created_by": 1, "id": "77086", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "77086"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00077086", "sets": ["28"]}, "author_link": ["792747", "792751", "792748", "792750", "792752", "792753", "792746", "792749"], "item_10005_date_7": {"attribute_name": "発表年月日", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2019-09-17", "subitem_date_issued_type": "Issued"}]}, "item_10005_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": " It was found that the behavior of damage sites introduced by Single-Event Gate Ruptures (SEGRs) in Silicon Carbide (SiC) vertical power Metal-\nOxide-Semiconductor Field-Effect-Transistors (MOSFETs) were essentially different from the one observed in corresponding Si devices, although the\nelectrical behavior was similarly modeled.", "subitem_description_type": "Abstract"}]}, "item_10005_description_6": {"attribute_name": "会議概要(会議名, 開催地, 会期, 主催者等)", "attribute_value_mlt": [{"subitem_description": "European Conference on Radiation and its Effects on Components and Systems (RADECS2019)", "subitem_description_type": "Other"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nakada, Y."}], "nameIdentifiers": [{"nameIdentifier": "792746", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kuboyama, S."}], "nameIdentifiers": [{"nameIdentifier": "792747", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Mizuta, E."}], "nameIdentifiers": [{"nameIdentifier": "792748", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeyama, Akinori"}], "nameIdentifiers": [{"nameIdentifier": "792749", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohshima, Takeshi"}], "nameIdentifiers": [{"nameIdentifier": "792750", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shindou, H."}], "nameIdentifiers": [{"nameIdentifier": "792751", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeyama, Akinori", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "792752", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohshima, Takeshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "792753", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "conference object", "resourceuri": "http://purl.org/coar/resource_type/c_c94f"}]}, "item_title": "Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs"}]}, "item_type_id": "10005", "owner": "1", "path": ["28"], "permalink_uri": "https://repo.qst.go.jp/records/77086", "pubdate": {"attribute_name": "公開日", "attribute_value": "2019-10-07"}, "publish_date": "2019-10-07", "publish_status": "0", "recid": "77086", "relation": {}, "relation_version_is_last": true, "title": ["Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs"], "weko_shared_id": -1}
Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs
https://repo.qst.go.jp/records/77086
https://repo.qst.go.jp/records/77086a0a813e8-a34c-4234-879c-593ac0653e7a
Item type | 会議発表用資料 / Presentation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2019-10-07 | |||||
タイトル | ||||||
タイトル | Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Nakada, Y.
× Nakada, Y.× Kuboyama, S.× Mizuta, E.× Takeyama, Akinori× Ohshima, Takeshi× Shindou, H.× Takeyama, Akinori× Ohshima, Takeshi |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | It was found that the behavior of damage sites introduced by Single-Event Gate Ruptures (SEGRs) in Silicon Carbide (SiC) vertical power Metal- Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) were essentially different from the one observed in corresponding Si devices, although the electrical behavior was similarly modeled. |
|||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | European Conference on Radiation and its Effects on Components and Systems (RADECS2019) | |||||
発表年月日 | ||||||
日付 | 2019-09-17 | |||||
日付タイプ | Issued |