量研学術機関リポジトリ「QST-Repository」は、国立研究開発法人 量子科学技術研究開発機構に所属する職員等が生み出した学術成果（学会誌発表論文、学会発表、研究開発報告書、特許等）を集積しインターネット上で広く公開するサービスです。 Welcome to QST-Repository where we accumulates and discloses the academic research results(Journal Publications, Conference presentation, Research and Development Report, Patent, etc.) of the members of National Institutes for Quantum Science and Technology.
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The pursuit of Ga2O3 as an ultra-wide-bandgap (4.5–4.9 eV) semiconductor for next-generation power-switching and harsh-environment electronics has catalyzed the rapid development of
Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) in recent years. Field-plated lateral depletion-mode devices demonstrated a high off-state breakdown voltage of 755 V, a large on/off current ratio of over nine orders of magnitude, dispersion-free output characteristics, stable high temperature operation, and strong gamma-ray tolerance. Enhancement-mode operation with a six-order-of-magnitude on/off current ratio was enabled by an unintentionally-doped epitaxial Ga2O3 channel that was fully depleted at zero gate bias due to a low background carrier density. Planar-gate vertical Ga2O3 MOSFETs, wherein a current blocking layer provided electrical isolation between source and drain except at an aperture opening through which drain current was conducted, demonstrated successful transistor action. Advanced transistor architectures, notably normally-off vertical devices, will further enhance the impact of Ga2O3 power electronics.
Ga2O3 power transistors: The promise, the reality, and future directions
