量研学術機関リポジトリ「QST-Repository」は、国立研究開発法人 量子科学技術研究開発機構に所属する職員等が生み出した学術成果（学会誌発表論文、学会発表、研究開発報告書、特許等）を集積しインターネット上で広く公開するサービスです。 Welcome to QST-Repository where we accumulates and discloses the academic research results(Journal Publications, Conference presentation, Research and Development Report, Patent, etc.) of the members of National Institutes for Quantum Science and Technology.
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Gallium oxide (Ga2O3) is an emerging ultra-wide-bandgap (4.5–4.9 eV) semiconductor for high power and high voltage electronics with potential applications in harsh environments. Since the first report of a Ga2O3 field-effect transistor (FET) in 2012, Ga2O3 power devices have undergone tremendous technological advancement. This talk reviews the progress we have made and the lessons we have learnt on both lateral and vertical Ga2O3 metal-oxide-semiconductor (MOS) FETs. Future development directions will also be discussed.
Reflections on the State of Ultra-Wide-Bandgap Ga2O3 MOSFETs
