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Position-selective introduction of electrically excitable color centers in SiC pn junction diode by proton beam writing
https://repo.qst.go.jp/records/66861
https://repo.qst.go.jp/records/668611304fd3f-fa96-4999-bc93-fc0f0e738c75
Item type | 会議発表用資料 / Presentation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2018-07-26 | |||||
タイトル | ||||||
タイトル | Position-selective introduction of electrically excitable color centers in SiC pn junction diode by proton beam writing | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
山崎, 雄一
× 山崎, 雄一× 千葉, 陽史× 牧野, 高紘× 佐藤, 真一郎× 山田, 尚人× 佐藤, 隆博× 土方, 泰斗× 児嶋, 一聡× Lee, Sang-Yun× 大島, 武× 山崎 雄一× 千葉 陽史× 牧野 高紘× 佐藤 真一郎× 山田 尚人× 佐藤 隆博× 大島 武 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | we created Vsi into in-plane SiC pn junction diode by using focused proton beam as small as 1 um of diameter. Characterizations suggested that PBW successfully introduced electrically excitable Vsi into the device without remarkable degradation of diode performance. | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | 第16回核マイクロプローブの技術及び応用に関する国際会議(ICNMTA2018) への参加、及びSiC中のSPSに関する研究についての打合せ(山?雄一) | |||||
発表年月日 | ||||||
日付 | 2018-07-11 | |||||
日付タイプ | Issued |