量研学術機関リポジトリ「QST-Repository」は、国立研究開発法人 量子科学技術研究開発機構に所属する職員等が生み出した学術成果（学会誌発表論文、学会発表、研究開発報告書、特許等）を集積しインターネット上で広く公開するサービスです。 Welcome to QST-Repository where we accumulates and discloses the academic research results(Journal Publications, Conference presentation, Research and Development Report, Patent, etc.) of the members of National Institutes for Quantum Science and Technology.
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Gallium oxide (Ga2O3) is attractive for power devices owing to its wide bandgap of 4.5 eV and the availability of economical device-quality native substrates. Recent research on Ga2O3 Schottky barrier diodes and field-effect transistors (FETs) has seen rapid progress. An unexplored area of immense interest is the radiation tolerance of these devices, whose high-voltage and high-temperature capabilities are expected to find applications in extreme radiation environments such as space and nuclear facilities that impose stringent reliability requirements to ensure stable operations. This paper reports the first investigation into the effects of ionizing radiation on Ga2O3 metal oxide-semiconductor FETs (MOSFETs). A gamma-ray (γ-ray) tolerance as high as 230 kGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of the MOSFETs’ stable on-current, on-resistance (RON), and threshold voltage (VT). Radiation-induced degradations in the gate insulation and surface passivation, which could be attributed to dielectric damage and interface trap generation, were found to limit the overall radiation resistance of these devices.
Radiation Hardness of Ga2O3 MOSFETs against Gamma-Ray Irradiation
