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Strain Relaxation Analysis Using In-situ X-ray Reciprocal Space Mapping Measurements in RF-MBE Growth of GaInN
https://repo.qst.go.jp/records/65940
https://repo.qst.go.jp/records/65940678731de-eb10-47bd-a076-0a9f0b7194a2
Item type | 会議発表用資料 / Presentation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2016-08-16 | |||||
タイトル | ||||||
タイトル | Strain Relaxation Analysis Using In-situ X-ray Reciprocal Space Mapping Measurements in RF-MBE Growth of GaInN | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
T., Yamaguchi (工学院大)
× T., Yamaguchi (工学院大)× 佐々木, 拓生× 高橋, 正光× T., Honda(工学院大)× T., Onuma(工学院大)× Y., Nanishi(立命館大)× 佐々木 拓生× 高橋 正光 |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | In-situ X-ray RSM measurements in the RF-MBE growth of GaInN films on GaN and InN templates were carried out in order to understand the strain relaxation mechanism of GaInN. The in-situ RSM measurements were performed using the MBE directly coupled to an X-ray diffractometer at the beamline of synchrotron radiation facility Spring-8. From the results of in-situ X-ray RSM measurements, the strain relaxation involving the relaxation in lattice constant and that in compositional pulling effect was clearly observed. | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18) | |||||
発表年月日 | ||||||
日付 | 2016-08-09 | |||||
日付タイプ | Issued |