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Positronium formation at Si surfaces
https://repo.qst.go.jp/records/49077
https://repo.qst.go.jp/records/490774e429a6b-d516-4a32-a2a3-c7311f8bbb85
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-06-12 | |||||
タイトル | ||||||
タイトル | Positronium formation at Si surfaces | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
河裾, 厚男
× 河裾, 厚男× 前川, 雅樹× 宮下, 敦巳× 和田, 健× 海和, 俊亮× 長嶋, 泰之× 河裾 厚男× 前川 雅樹× 宮下 敦巳× 和田 健 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Positronium formation at Si(111) and Si(001) surfaces has been investigated by changing the doping level systematically over the range 300–1000 K. The temperature dependence of the positronium fraction varied with the doping condition, and there were practically no differences between the two surface orientations. In heavily doped n-type Si (n>1E+18 cm−3), the positronium fraction (I_Ps) increased above 700Kand reached more than 95% at 1000 K. In undoped and lightly doped Si (n, p <1E15 cm−3), I_Ps decreased from 300 to 500 K and increased above 700 K. In heavily doped p-type Si (p >1E18 cm−3), I_Ps increased in two steps: one at 500–600 K and one above 700 K. Overall, the positronium fraction increased with the amount of n-type doping. These phenomena were found to be dominated by two kinds of positronium with energies of 0.6–1.5 eV and 0.1–0.2 eV, which were attributed to the work-function mechanism and the surface-positron-mediated process, respectively, with contributions from conduction electrons. The positron work function was estimated to be positive. This agrees with first-principles calculation. The positive positron work function implies that the formation of excitonic electron-positron bound states begins in the bulk subsurface region and transits to the final positronium state in the vacuum. | |||||
書誌情報 |
Physical Review B 巻 97, p. 245303-1-245303-8, 発行日 2018-06 |
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出版者 | ||||||
出版者 | American Physical Society | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1103/PhysRevB.97.245303 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://link.aps.org/doi/10.1103/PhysRevB.97.245303 | |||||
関連名称 | https://link.aps.org/doi/10.1103/PhysRevB.97.245303 |