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Thin Silicon Microdosimeter Utilizing 3-D MEMS Fabrication Technology: Charge Collection Study and Its Application in Mixed Radiation Fields
https://repo.qst.go.jp/records/49013
https://repo.qst.go.jp/records/490136ed37706-67fa-4010-8ebe-3cb6addabff3
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-05-15 | |||||
タイトル | ||||||
タイトル | Thin Silicon Microdosimeter Utilizing 3-D MEMS Fabrication Technology: Charge Collection Study and Its Application in Mixed Radiation Fields | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Tran, Thuy Linh
× Tran, Thuy Linh× Chartier, Lachlan× Prokopovich, Anthony× BOLST, David× Povoli, Marco× Summanwar, Anand× Kok, Angela× Pogossov, Alex× Petasecca, Marco× Guatelli, Susanna× I., Reinhard Mark× Lerch, Michael× Nancarrow, Mitchell× 松藤, 成弘× Michael, Jackson× Anatoly, Rozenfeld× Tran Thuy Linh× Chartier Lachlan× Prokopovich Anthony× BOLST David× Petasecca Marco× Lerch Michael× 松藤 成弘× Anatoly Rozenfeld |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | New 10-µm-thick silicon microdosimeters utilizing 3-D technology have been developed and investigated in this paper. The TCAD simulations were carried out to understand the electrical properties of the microdosimeters’ design. A charge collection study of the devices was performed using 5.5-MeV He2+ ions which were raster scanned over the surface of the detectors and the charge collection median energy maps were obtained and the detection yield was also evaluated. The devices were tested in a 290 MeV/u carbon ion beam at the Heavy Ion Medical Accelerator in Chiba (HIMAC) in Japan. Based on the microdosimetric measurements, the quality factor and dose equivalent out of field were obtained in a mixed radiation field mimicking the radiation environment for spacecraft in deep space. |
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書誌情報 |
IEEE Transactions on Nuclear Science 巻 65, p. 467-472, 発行日 2018-05 |
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出版者 | ||||||
出版者 | IEEE | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1109/TNS.2017.2768062 |