量研学術機関リポジトリ「QST-Repository」は、国立研究開発法人 量子科学技術研究開発機構に所属する職員等が生み出した学術成果（学会誌発表論文、学会発表、研究開発報告書、特許等）を集積しインターネット上で広く公開するサービスです。 Welcome to QST-Repository where we accumulates and discloses the academic research results(Journal Publications, Conference presentation, Research and Development Report, Patent, etc.) of the members of National Institutes for Quantum Science and Technology.
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The effects of ionizing radiation on b-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated
for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs’ output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer
characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to
dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.
Radiation hardness of b-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation
