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Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide
https://repo.qst.go.jp/records/48711
https://repo.qst.go.jp/records/48711d62ff33a-49d3-4b02-8aea-0aab6e0981a8
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-04-12 | |||||
タイトル | ||||||
タイトル | Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Kraus, H.
× Kraus, H.× Simin, D.× Kasper, C.× Suda, Y.× Kawabata, S.× Kada, W.× Honda, T.× Hijikata, Y.× Ohshima, Takeshi× Dyakonov, V.× 大島 武 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The controlled generation of quantum centers in silicon carbide (SiC) is realized by focused proton beam in a noncomplex manner without need for pre- or postirradiation treatment. The generation depth and resolution can be predicted by matching the proton energy to the material’s stopping power, and the amount of quantum centers at one specific sample volume is tunable from ensembles of millions to discernible single photon emitters. The generated centers were identified as silicon vacancies through their characteristic magnetic resonance signatures and demonstrate that they possess a long spin−echo coherence time of 42 ±20 μs at room temperature. |
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書誌情報 |
Nano Letters 発行日 2017-03 |
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出版者 | ||||||
出版者 | American Chemical Society | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1021/acs.nanolett.6b05395 |