量研学術機関リポジトリ「QST-Repository」は、国立研究開発法人 量子科学技術研究開発機構に所属する職員等が生み出した学術成果（学会誌発表論文、学会発表、研究開発報告書、特許等）を集積しインターネット上で広く公開するサービスです。 Welcome to QST-Repository where we accumulates and discloses the academic research results(Journal Publications, Conference presentation, Research and Development Report, Patent, etc.) of the members of National Institutes for Quantum and Radiological Science and Technology.
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Determination of specific ion positions of Cr3+ and O2− in Cr2O3 thin films and their relationship to exchange anisotropy at Co/Cr2O3 interfaces
利用統計を見る
The structures of antiferromagnetic Cr2O3(0001) thin films with perpendicular exchange bias were investigated using reflection high-energy electron diffraction, X-ray reflectivity, and synchrotron X-ray diffraction. We mainly investigated the specific ion positions of Cr3+ and O2− in the corundum structure and discussed their relationship to the magnetic anisotropy of Cr2O3. The Cr2O3(0001) thin film grown on a Pt(111) buffer layer exhibited a perpendicular exchange anisotropy density of 0.42 mJ/m2, in which the Cr3+ position is the primary factor in the enhancement of magnetic anisotropy due to dipolar-interaction. In contrast, the single-crystalline Cr2O3(0001) film grown on a α-Al2O3(0001) substrate featured a low exchange magnetic anisotropy of 0.098 mJ/m2. In this film, the Cr3+ position parameter is an insignificant factor, leading to low magnetic anisotropy. The O2− ion position also differs between the two types of films, which can affect both the magnetic anisotropy energy originating from fine structures and the magneto-electric properties of Cr2O3.
Determination of specific ion positions of Cr3+ and O2− in Cr2O3 thin films and their relationship to exchange anisotropy at Co/Cr2O3 interfaces
