量研学術機関リポジトリ「QST-Repository」は、国立研究開発法人 量子科学技術研究開発機構に所属する職員等が生み出した学術成果（学会誌発表論文、学会発表、研究開発報告書、特許等）を集積しインターネット上で広く公開するサービスです。 Welcome to QST-Repository where we accumulates and discloses the academic research results(Journal Publications, Conference presentation, Research and Development Report, Patent, etc.) of the members of National Institutes for Quantum Science and Technology.
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Gamma-ray irradiation into vertical type n-channel hexagonal
(4H)-silicon carbide (SiC) metal-oxide-semiconductor field
effect transistors (MOSFETs) was performed under various
gate biases. The threshold voltage for the MOSFETs irradiated
with a constant positive gate bias showed a large negative shift,
and the shift slightly recovered above 100 kGy. For MOSFETs
with non- and a negative constant biases, no significant change
in threshold voltage, Vth, was observed up to 400 kGy. By
changing the gate bias from positive bias to either negative or
non-bias, the Vth significantly recovered from the large
negative voltage shift induced by 50 kGy irradiation with
positive gate bias after only 10 kGy irradiation with either
negative or zero bias. It indicates that the positive charges
generated in the gate oxide near the oxide–SiC interface due to
irradiation were removed or recombined instantly by the
irradiation under zero or negative biases.
Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs
